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APT17F120J
1200V, 18A, 0.58 Max, trr 330ns
N-Channel FREDFET
POWER MOS 8(R) is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
S G D
S
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
file # E145592
APT17F120J Single die FREDFET
G
D
S
FEATURES
* Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 18 12 104 30 2165 14
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.) Package Weight -55 2500 1.03 29.2 Torque 10 Terminals and Mounting Screws. 1.1 0.15 150 C V
050-8167 Rev A 5-2009
Min
Typ
Max 545 0.23
Unit W C/W
oz g in*lbf N*m
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VDS = 1200V VGS = 0V TJ = 25C TJ = 125C
APT17F120J
Typ 1.41 0.55 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 1200
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
2.5
0.58 5 250 1000 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 14A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 31 9670 115 715 275
Max
Unit S
pF
VGS = 0V, VDS = 0V to 800V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 14A, VDS = 600V Resistive Switching VDD = 800V, ID = 14A RG = 2.2 6 , VGG = 15V
140 300 50 140 50 31 170 48
nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 18
Unit
G S
A 104 1.1 330 660 1.72 4.67 11 16 25 V ns C A V/ns
ISD = 14A, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 14A 3 diSD/dt = 100A/s TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 14A, di/dt 1000A/s, VDD = 100V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 22.1mH, RG = 25, IAS = 14A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
050-8167 Rev A 5-2009
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT17F120J
70
V
GS
25
= 10V T = 125C
J
60 ID, DRAIN CURRENT (A) 50 40 30
TJ = 25C
V
GS
= 6, 7, 8 & 9V
ID, DRIAN CURRENT (A)
TJ = -55C
20
15
5V
10
20 10 0
TJ = 125C TJ = 150C
5
4.5V
0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
0
0
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0
NORMALIZED TO VGS = 10V @ 14A
100
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
2.5 ID, DRAIN CURRENT (A)
80
2.0
60
TJ = -55C TJ = 25C TJ = 125C
1.5
40
1.0
0.5 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 40 35
20
0
0
1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics
20,000 10,000 Ciss
TJ = -55C TJ = 25C
gfs, TRANSCONDUCTANCE
25 20 15 10 5 0 0 2 4 6 8 10 12 14 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 16
TJ = 125C
C, CAPACITANCE (pF)
30
1000
100
Coss
Crss 10 200 400 600 800 1000 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0
16
ID = 14A
100 ISD, REVERSE DRAIN CURRENT (A) 90 80 70 60 50 40 050-8167 Rev A 5-2009 30 20 10 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 0
TJ = 150C TJ = 25C
VGS, GATE-TO-SOURCE VOLTAGE (V)
14 12
VDS = 240V
10
VDS = 600V
8 6 4 2 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0
VDS = 960V
APT17F120J
200 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)
IDM
200 100
IDM Rds(on) 13s 100s 1ms TJ = 150C TC = 25C
10
13s 100s 1ms
10
1
Rds(on) TJ = 125C TC = 75C
10ms 100ms DC line
1
10ms
0.1
1
10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
Scaling for Different Case & Junction Temperatures: 100ms ID = ID(T = 25C)*(TJ - TC)/125 C DC line
10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area
1
0.25 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 0.20 0.7 0.15 0.5
Note:
PDM
0.10 0.3 0.05 0.1 0.05 0 10-5 10-4 SINGLE PULSE
t1 t2
t1 = Pulse Duration Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0.1 1 10 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193)
1.95 (.077) 2.14 (.084)
* Source
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
050-8167 Rev A 5-2009
38.0 (1.496) 38.2 (1.504)
* Source Dimensions in Millimeters and (Inches)
Gate
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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